to-251-3l plastic-encapsulate transistors mjd41c transistor (npn) features z designed for g eneral p urpose a mplifier and l ow s peed s witching a pplications. z lead formed for surface mount applications in plastic sleeves (no suffix) z straight lead version in plastic sleeves (??1? suffix) z lead formed version in 16 mm tape and reel (?t4? suffix) z electrically similar to p opular tip41 and tip42 series z monolithic construction with built?in base?emitter resistors maximum ratings (t a =25 unless otherwise noted) symbol para m eter value unit v cbo collector-base voltage 100 v v ceo collector-emitter voltage 100 v v ebo emitter-base voltage 5 v i c collector current -continuous 6 a p c collector power dissipation 1.25 w t j junction temperature 150 t stg storage temperature -65-150 electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =100 a,i e =0 100 v collector-emitter breakdown voltage v ceo (sus) i c =30ma,i b =0 100 v emitter-base breakdown voltage v (br)ebo i e =100 a,i c =0 5 v collector cut-off current i ceo v cb =60v,i e =0 50 a emitter cut-off current i ebo v eb =5v i c =0 0.5 ma h fe(1) v ce =4v i c =0.3a 30 dc current gain h fe(2) v ce =4v,i c =3a 15 75 collector-emitter saturation voltage v ce(sat) i c =6a,i b =0.6a 1.5 v base-emitter voltage v be v ce =4v,i c =6a 2 v transition frequency f t v ce =10v,i c =500ma,f=1mhz 3 mhz to-251 -3l 1. base 2. collector 3. emitter 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification d,jan,2014
0.1 1 10 10 100 1000 10000 0.2 0.4 0.6 0.8 1.0 1.2 0.1 1 10 100 1000 0 25 50 75 100 125 150 0 500 1000 1500 2000 2500 0.1 1 10 100 1000 0.2 0.4 0.6 0.8 1.0 1.2 0.1 1 10 100 1000 0.01 0.1 1 0.1 1 10 100 1000 10 100 012345678910 0 500 1000 1500 2000 2500 3000 3500 4000 100 1000 1 10 100 capacitance c (pf) reverse voltage v (v) c ob c ib f=1mhz i e =0/i c =0 t a =25 v cb / v eb c ob / c ib ?? 20 t a = 1 0 0 t a = 2 5 collcetor current i c (ma) base-emmiter voltage v be (v) i c v be common emitter v ce =4v collector power dissipation p c (mw) ambient temperature t a ( ) p c ?? t a 6000 base-emitter saturation voltage v besat (v) collector current i c (ma) =10 t a =100 t a =25 i c v besat ?? 6000 collector-emitter saturation voltage v cesat (v) collector current i c (ma) i c v cesat ?? t a =100 t a =25 =10 6000 200 dc current gain h fe collector current i c (ma) 6000 common emitter v ce =4v t a =25 t a =100 i c h fe ?? mjd41c 50ma 45ma 40ma 35ma 30ma 25ma 20ma 15ma 10ma i b =5ma collector current i c (ma) collector-emitter voltage v ce (v) common emitter t a =25 static characteristic 50 transition frequency f t (mhz) collector current i c (ma) v ce =10v t a =25 i c ?? f t ?? 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification d,jan,2014
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